2008. 2. 25 1/5 semiconductor technical data kmb2d0n60sa n-ch trench mosfet revision no : 1 general description this trench mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for portable equipment. features v dss =60v, i d =2a drain-source on resistance r ds(on) =160m (max.) @ v gs =10v r ds(on) =220m (max.) @ v gs =4.5v super high dense cell design maximum rating (ta=25 ) dim millimeters sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.40+0.15/-0.05 2.40+0.30/-0.20 g1.9 0 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ pin connection (top view) characteristic symbol n-ch unit drain-source voltage v dss 60 v gate-source voltage v gss 20 v drain current dc@ta=25 i d 2.0 a dc@ta=70 1.6 pulsed i dp 10 drain-source-diode forward current i s 1.0 a drain power dissipation ta=25 p d 1.25 w ta=70 0.8 maximum junction temperature t j 150 storage temperature range t stg -55 150 thermal resistance, junction to ambient r thja 100 /w 2 3 1 gs d 1 2 3 knd note>*surface mounted on 1? ?? 1? fr4 board, t ?a 5sec
2008. 2. 25 2/5 kmb2d0n60sa revision no : 1 electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i ds =250 a, v gs =0v, 60 - - v drain cut-off current i dss v gs =0v, v ds =60v - - 0.5 a v gs =0v, v ds =60v, tj=55 - - 10 gate leakage current i gss v gs = 20v, v ds =0v - - 100 na gate threshold voltage v th v ds =v gs, i d =250 a 1.5 - - v drain-source on resistance r ds(on) * v gs =10v, i d =2a - 125 160 m v gs =4.5v, i d =1.7a - 155 220 on-state drain current i d(on) * v gs =10v, v ds 4.5v 6 - - a v gs =4.5v, v ds 4.5v 4 - - forward transconductance g fs * v ds =4.5v, i d =2.0a - 4.6 - s dynamic input capaclitance c iss v ds =30v, f=1mhz, v gs =0v - 240 - pf ouput capacitance c oss - 30 - reverse transfer capacitance c rss - 16 - total gate charge q g * v ds =30v, v gs =10v, i d =2a - 4.8 10 nc gate-source charge q gs * - 0.8 - gate-drain charge q gd * - 1.0 - turn-on delat time t d(on) * v dd =30v, v gs =4.5v i d =1a, r g =6 - 7 15 ns turn-on rise time t r * - 10 20 turn-off deley time t d(off) * - 17 35 turn-off fall time t f * - 6 15 source-drain diode ratings source-drain forward voltage v sdf * v gs =0v, i s =1a - 0.77 1.2 v note 1> * pulse test : pulse width <300 , duty cycle < 2%
2008. 2. 25 3/5 kmb2d0n60sa revision no : 1 246810 0 2 0 4 6 8 10 10v 5.0v 3.5v 4.5v 4.0v drain - current i d (a) 0 0 4 200 100 300 500 400 81216 gate-source volatage v gs (v) 0 01 2 4 10 8 6 2345 drain- source on-resistance r ds(on) (m ? ) 0 150 250 50 100 200 -25 150 50 75 100 125 25 -50 0 -75 common source v gs =10v, i d =2a pulse test common source v ds =5v pulse test c common source ta=25 pulse test c common source ta=25 pulse test junction temperature tj ( ) c -75 -50 -25 0 50 100 75 125 150 25 0 1 4 2 5 3 junction temperature tj ( ) c common source v gs =v ds i d =250 a pulse test gate threshold voltage v th (v) source - drain forward voltage v sdf (v) drain current i s (a) 0.8 1.2 00.4 1. 62.0 0 2 10 8 4 6 fig1. i d - v ds drain current i d (a) drain - source voltage v ds (v) drain current i d (a) drain source on resistance r ds(on) (m ? ) fig2. r ds(on) - i d fig3. i d - v gs fig4. r ds(on) - t j fig5. v th - t j fig6. i s -v sdf -55 c 25 c v gs =4.5v v gs =10v 125 c v gs =3v c common source ta=25 pulse test
2008. 2. 25 4/5 kmb2d0n60sa revision no : 1 time t (sec) 10 -3 10 -4 10 -1 10 0 10 10 2 500 10 -2 0.01 0.1 1 fig10. transient thermal response curve normalized transient thermal resistance 0.1 0.02 0.05 d = 0.5 0.2 single pulse - duty = t/t t 1 t 2 p dm v ds =30v i d =2.0a total gate - charge q g (nc) fig8. c - v ds drain - source voltage v ds (v) 0 10 6 2 4 8 1 2 5 4 3 0 fig7. v gs - q g capacitance c (pf) gate - source voltage v gs (v) 0 100 200 300 400 061218 24 30 v gs =0v f = 1mhz c oss c iss c rss drain current i d (a) drain - source voltage v ds (v) fig9. safe operation area 0.1 0.01 0.1 1.0 10.0 100.0 110 100 v gs = 10v single pulse t a = 25 c r ds(on) limited 1ms 100 s 10ms 100ms 1s dc
2008. 2. 25 5/5 kmb2d0n60sa revision no : 1 fig11. gate charge circuit and wave form v gs 10 v q g q gd q gs q v ds v gs t r t d(on) 10% 90% t on t f t d(off) t off i d i d fig12. resistive load switching v ds v gs v ds v gs 1.0 ma schottky diode 10 v 6 ? r l 0.5 v dss 0.5 v dss
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